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SSM3K303T(TE85L,F)

更新时间： 2024-01-18 03:39:37
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 232K
描述
MOSFET N-CH SGL 30V 2.9A TSM

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SSM3K303T(TE85L,F) 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.7
Is Samacsys：NBase Number Matches：1

SSM3K303T(TE85L,F) 数据手册

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SSM3K303T  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K303T  
High Speed Switching Applications  
Unit: mm  
•
•
4 V drive  
Low ON-resistance:  
R
R
= 120 mΩ (max) (@V  
= 4V)  
GS  
on  
=
83 mΩ (max) (@V  
= 10V)  
on  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain–source voltage  
Symbol  
Rating  
30  
Unit  
V
V
DS  
Gate–source voltage  
V
± 20  
V
GSS  
DC  
I
2.9  
D
Drain current  
A
Pulse  
I
5.8  
DP  
D (Note 1)  
Drain power dissipation  
Channel temperature  
P
700  
mW  
°C  
T
150  
ch  
Storage temperature range  
Note:  
T
−55 to 150  
°C  
stg  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/  
voltage, etc.) are within the absolute maximum ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-3S1A  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Weight: 10 mg (typ.)  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 1 mA, V = 0  
Min  
Typ.  
Max  
Unit  
Drain–source breakdown voltage  
Drain cutoff current  
V
I
30  
⎯
⎯
1.1  
2.5  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
V
μA  
μA  
V
(BR) DSS  
D
GS  
= 30 V, V  
I
V
V
V
V
= 0  
DSS  
DS  
GS  
DS  
DS  
GS  
= ± 20 V, V  
Gate leakage current  
I
= 0  
⎯
±1  
GSS  
DS  
Gate threshold voltage  
Forward transfer admittance  
V
= 5 V, I = 1 mA  
⎯
2.6  
⎯
th  
D
⏐Y ⏐  
= 5 V, I = 1.5 A  
(Note2)  
(Note2)  
(Note2)  
4.9  
64  
S
fs  
D
I
I
= 1.5 A, V  
= 10 V  
= 4 V  
83  
120  
⎯
D
D
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
= 1.0 A, V  
88  
Input capacitance  
C
V
V
V
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
180  
100  
38  
pF  
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
C
⎯
oss  
C
⎯
rss  
Q
g
3.3  
1.4  
1.9  
13  
⎯
V
= 15 V, I = 2.9 A, V  
DS  
= 4 V  
GS  
nC  
Gate−Source Charge  
Gate−Drain Charge  
Q
⎯
DS  
gs  
gd  
Q
⎯
Turn-on time  
Switching time  
t
t
V
V
= 10 V, I = 1.5 A,  
⎯
on  
off  
DD  
GS  
D
ns  
V
= 0 to 4 V, R = 10 Ω  
Turn-off time  
14  
⎯
G
Drain–source forward voltage  
Note2: Pulse test  
V
I
= − 2.9 A, V = 0 V  
GS  
(Note2)  
– 0.9  
– 1.25  
DSF  
D
Start of commercial production  
2007-09  
1
2014-03-01  
123456

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