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SSM3K2615TU PDF预览

SSM3K2615TU

更新时间: 2024-11-06 14:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 454K
描述
N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-323F(UFM)

SSM3K2615TU 数据手册

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SSM3K2615TU  
MOSFETs Silicon N-Channel MOS  
SSM3K2615TU  
1. Applications  
Load Switches  
Motor Drivers  
2. Features  
(1) AEC-Q101 Qualified (Note1).  
(2) 3.3-V gate drive voltage.  
(3) Low drain-source on-resistance  
: RDS(ON) = 380 m(typ.) (@VGS = 3.3 V, ID = 0.5 A)  
RDS(ON) = 330 m(typ.) (@VGS = 4.0 V, ID = 1.0 A)  
RDS(ON) = 230 m(typ.) (@VGS = 10 V, ID = 1.0 A)  
Note1: For detail information, please contact to our sales.  
3. Packaging and Pin Assignment  
1: Gate  
2: Source  
3: Drain  
UFM  
Start of commercial production  
2016-06  
©2016 Toshiba Corporation  
2016-12-05  
Rev.2.0  
1

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