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SSM3K301T(TE85L)

更新时间： 2024-02-29 21:14:01
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 190K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.5A I(D),SOT-346

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SSM3K301T(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.92配置：Single
最大漏极电流 (Abs) (ID)：3.5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.7 W
子类别：FET General Purpose Powers表面贴装：YES
Base Number Matches：1

SSM3K301T(TE85L) 数据手册

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SSM3K301T  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type  
SSM3K301T  
Power Management Switch Applications  
Unit: mm  
High-Speed Switching Applications  
•
•
1.8 V drive  
Low ON-resistance:  
R
on  
R
on  
R
on  
= 110 mΩ (max) (@V  
= 1.8 V)  
= 2.5 V)  
= 4.0 V)  
GS  
=
=
74 mΩ (max) (@V  
GS  
GS  
56 mΩ (max) (@V  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
20  
Unit  
V
V
DS  
Gate-Source voltage  
Drain current  
V
± 12  
V
GSS  
DC  
Pulse  
I
3.5  
7.0  
D
A
I
DP  
Drain power dissipation  
Channel temperature  
P
700  
150  
mW  
°C  
D (Note 1)  
T
ch  
Storage temperature range  
T
stg  
−55~150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-3S1A  
Weight: 10 mg (typ.)  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
20  
12  
⎯
⎯
0.4  
6
Typ.  
⎯
Max  
⎯
Unit  
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
V
V
= −12 V  
⎯
⎯
Drain cutoff current  
I
V
V
V
V
= 20 V, V  
= 0  
⎯
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±12 V, V  
= 0  
⎯
±1  
1.0  
⎯
DS  
V
= 3 V, I = 1 mA  
⎯
th  
D
⏐Y ⏐  
= 3 V, I = 2.0 A  
(Note 2)  
(Note 2)  
(Note 2)  
(Note 2)  
10  
S
fs  
D
I
I
I
= 2.0 A, V  
= 1.0 A, V  
= 0.5 A, V  
= 4.0 V  
= 2.5 V  
= 1.8 V  
⎯
⎯
⎯
⎯
⎯
44  
56  
74  
110  
⎯
D
D
D
GS  
GS  
GS  
Drain-Source ON-resistance  
R
mΩ  
pF  
53  
DS (ON)  
70  
Input capacitance  
C
C
320  
62  
iss  
V
= 10 V, V  
= 0, f = 1 MHz  
GS  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
⎯
DS  
oss  
C
⎯
⎯
51  
⎯
rss  
Qg  
4.8  
3.3  
1.5  
18  
⎯
V
V
= 10 V, I = 3.5 A  
DS  
DS  
GS  
⎯
⎯
nC  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
⎯
= 4 V  
⎯
Turn-on time  
Switching time  
t
t
⎯
⎯
⎯
⎯
on  
off  
V
V
= 10 V, I = 2 A,  
DD  
GS  
D
ns  
V
= 0~2.5 V, R = 4.7 Ω  
G
Turn-off time  
14  
⎯
Drain-Source forward voltage  
Note 2: Pulse test  
V
I
= −3.5 A, V = 0 V  
GS  
(Note 2)  
−0.85  
−1.2  
DSF  
D
1
2007-11-01  
123456

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