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SSM3K302T

更新时间： 2024-02-19 04:38:45
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
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6页 170K
描述
Power Management Switch Applications

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SSM3K302T 数据手册

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SSM3K302T  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K302T  
Power Management Switch Applications  
Unit: mm  
High Speed Switching Applications  
•
•
•
1.8 V drive  
Low ON-resistance:  
R
on  
R
on  
R
on  
= 131 mΩ (max) (@V  
= 1.8V)  
= 2.5V)  
= 4.0V)  
GS  
=
=
87mΩ (max) (@V  
GS  
71 mΩ (max) (@V  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain–source voltage  
Symbol  
Rating  
30  
Unit  
V
V
DS  
Gate–source voltage  
V
± 12  
3.0  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
6.0  
DP  
D (Note 1)  
Drain power dissipation  
Channel temperature  
P
700  
mW  
°C  
T
150  
ch  
Storage temperature range  
T
−55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-3S1A  
Weight: 10 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
30  
18  
⎯
Typ.  
⎯
Max  
⎯
Unit  
V
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain–source breakdown voltage  
V
= –12 V  
⎯
⎯
V
Drain cutoff current  
I
V
V
V
V
= 30 V, V  
= 0  
⎯
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 12 V, V  
= 0  
⎯
⎯
±1  
1.0  
⎯
DS  
V
= 3 V, I = 1 mA  
0.4  
3.8  
⎯
⎯
th  
D
⏐Y ⏐  
= 3 V, I = 2 A  
(Note2)  
(Note2)  
(Note2)  
(Note2)  
7.7  
52  
64  
81  
270  
S
fs  
D
I
I
I
= 2.0 A, V  
= 1.0 A, V  
= 0.5 A, V  
= 4.0 V  
= 2.5 V  
= 1.8 V  
71  
87  
131  
⎯
D
D
D
GS  
GS  
GS  
Drain–source ON-resistance  
Input capacitance  
R
mΩ  
pF  
⎯
DS (ON)  
⎯
C
⎯
iss  
V
= 10 V, V  
= 0, f = 1 MHz  
GS  
DS  
Output capacitance  
C
⎯
⎯
⎯
⎯
⎯
⎯
⎯
56  
47  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
oss  
Reverse transfer capacitance  
Total Gate Charge  
C
rss  
Qg  
4.3  
2.8  
1.5  
20  
V
V
= 15 V, I = 3.0 A  
DS  
DS  
GS  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
= 4 V  
Turn-on time  
Switching time  
t
t
V
V
= 10 V, I = 2 A,  
on  
off  
DD  
GS  
D
ns  
V
= 0 to 2.5 V, R = 4.7 Ω  
Turn-off time  
31  
G
Drain–source forward voltage  
Note2: Pulse test  
V
I
= − 3.0 A, V = 0 V  
GS  
(Note2)  
⎯
– 0.85  
– 1.2  
DSF  
D
1
2007-11-01  
123456

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