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SSM3K17FU PDF预览

SSM3K17FU

更新时间: 2024-02-08 13:31:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 228K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K17FU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:40 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSM3K17FU 数据手册

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SSM3K17FU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K17FU  
High Speed Switching Applications  
Analog Switch Applications  
Unit: mm  
·
·
·
Suitable for high-density mounting due to compact package  
High drain-source voltage  
High speed switching  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-Source voltage  
Gate-Source voltage  
V
50  
±7  
V
V
DS  
V
GSS  
DC  
Drain current  
I
100  
D
mA  
Pulse  
I
200  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note)  
150  
mW  
°C  
D
T
150  
ch  
JEDEC  
JEITA  
Storage temperature range  
T
55~150  
°C  
stg  
SC-70  
2-2E1E  
Note: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3)  
TOSHIBA  
Weight: 6 mg (typ.)  
0.6 mm  
1.0 mm  
Marking  
Equivalent Circuit  
3
3
D M  
1
2
1
2
This transistor is a electrostatic sensitive device. Please handle with caution.  
1
2002-04-09  

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