生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.74 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 3.5 A | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 0.11 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.7 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3K301T(T5LSNY,F | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal |
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SSM3K301T(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.5A I(D),SOT-346 |
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SSM3K301T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.5A I(D),SOT-346 |
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SSM3K301T(TE85LF) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |
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SSM3K302T | TOSHIBA |
获取价格 |
Power Management Switch Applications |
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SSM3K303T | TOSHIBA |
获取价格 |
High Speed Switching Applications |
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SSM3K303T(TE85L,F) | TOSHIBA |
获取价格 |
MOSFET N-CH SGL 30V 2.9A TSM |
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SSM3K309T | TOSHIBA |
获取价格 |
Power Management Switch Applications |
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SSM3K309T(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.7A I(D),TO-236AB |
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SSM3K309T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.7A I(D),TO-236AB |
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