生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.11 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3K301T(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.5A I(D),SOT-346 |
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SSM3K301T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.5A I(D),SOT-346 |
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SSM3K301T(TE85LF) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |
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SSM3K302T | TOSHIBA |
获取价格 |
Power Management Switch Applications |
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SSM3K303T | TOSHIBA |
获取价格 |
High Speed Switching Applications |
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SSM3K303T(TE85L,F) | TOSHIBA |
获取价格 |
MOSFET N-CH SGL 30V 2.9A TSM |
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SSM3K309T | TOSHIBA |
获取价格 |
Power Management Switch Applications |
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SSM3K309T(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.7A I(D),TO-236AB |
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SSM3K309T(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.7A I(D),TO-236AB |
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SSM3K310T | TOSHIBA |
获取价格 |
High-Speed Switching Applications |
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