Datasheet > SSM3K17FU_07

SSM3K17FU_07

更新时间： 2024-01-10 08:50:29

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	166K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM3K17FU_07 数据手册

SSM3K17FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K17FU

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

Suitable for high-density mounting due to compact package

High drain-source voltage

High speed switching

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±7

GSS

Gate-Source voltage

Drain current

100

200

150

Pulse

P (Note 1)

°C

Drain power dissipation (Ta = 25°C)

Channel temperature

150

stg

−55~150

°C

Storage temperature range

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

SC-70

2-2E1E

TOSHIBA

Weight: 6 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm²× 3)

0.6 mm

1.0 mm

Marking

Equivalent Circuit

D M

This transistor is a electrostatic sensitive device. Please handle with caution.

2007-11-01

12 3 4 5

中文翻译

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