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SSM3K16FV PDF预览

SSM3K16FV

更新时间: 2024-10-01 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 130K
描述
Silicon N Channel MOS Type High Speed Switching Applications

SSM3K16FV 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.22Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM3K16FV 数据手册

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SSM3K16FV  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K16FV  
High Speed Switching Applications  
nit: mm  
Analog Switch Applications  
1.2±0.05  
0.8±0.05  
Suitable for high-density mounting due to compact package  
Low on-resistance : R = 3.0 (max) (@V  
= 4 V)  
on  
GS  
GS  
GS  
: R = 4.0 (max) (@V  
= 2.5 V)  
= 1.5 V)  
on  
: R = 15 (max) (@V  
on  
1
Absolute Maximum Ratings (Ta = 25°C)  
3
2
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
20  
Unit  
V
V
DS  
V
±10  
V
GSS  
Gate-Source voltage  
Drain current  
DC  
I
100  
200  
D
mA  
Pulse  
I
DP  
(Note 1)  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
150  
150  
mW  
°C  
1.Gate  
D
2.Source  
3.Drain  
T
ch  
VESM  
Storage temperature  
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
-
-
TOSHIBA  
2-1L1B  
Weight: 0.0015 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)  
0.5mm  
0.45mm  
0.45mm  
0.4mm  
Marking  
Equivalent Circuit  
3
3
D S  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  

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