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SSM3K16FV(L3KYOC,Z

更新时间： 2024-10-01 15:52:55
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 154K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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SSM3K16FV(L3KYOC,Z 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.62
配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：20 V
最大漏极电流 (ID)：0.1 A最大漏源导通电阻：4 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM3K16FV(L3KYOC,Z 数据手册

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SSM3K16FV  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K16FV  
High Speed Switching Applications  
nit: mm  
Analog Switch Applications  
1.2±0.05  
0.8±0.05  
•
•
Suitable for high-density mounting due to compact package  
Low on-resistance : R = 3.0 Ω (max) (@V  
= 4 V)  
on  
GS  
GS  
GS  
: R = 4.0 Ω (max) (@V  
= 2.5 V)  
= 1.5 V)  
on  
: R = 15 Ω (max) (@V  
on  
1
Absolute Maximum Ratings (Ta = 25°C)  
3
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
20  
Unit  
V
2
V
DS  
Gate-Source voltage  
V
±10  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
1.Gate  
2.Source  
3.Drain  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
150  
mW  
°C  
D
T
ch  
150  
VESM  
Storage temperature  
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
-
-
TOSHIBA  
2-1L1B  
Weight: 0.0015 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)  
0.5mm  
0.45mm  
0.45mm  
Marking  
Equivalent Circuit  
0.4mm  
3
3
D S  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects  
that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2003-04  
1
2014-03-01  
12345

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