是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-XBCC-N3 | Reach Compliance Code: | unknown |
风险等级: | 5.62 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 2.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3K16FS | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type High Speed Switching Applications | |
SSM3K16FU | TOSHIBA |
获取价格 |
High Speed Switching Applications Analog Switching Applications | |
SSM3K16FU(TE85LF) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
SSM3K16FU,LF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
SSM3K16FU_07 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type High Speed Switching Applications | |
SSM3K16FV | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type High Speed Switching Applications | |
SSM3K16FV(L3KYOC,Z | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SSM3K16FV(L3SMMD,Z | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SSM3K16FV(NHF,Z) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SSM3K16FVL3F(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |