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SSM3J46CTB PDF预览

SSM3J46CTB

更新时间: 2024-09-29 09:04:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管
页数 文件大小 规格书
6页 209K
描述
Power Management Switch Applications

SSM3J46CTB 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-XBCC-N3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.31Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):2 A
最大漏源导通电阻:0.103 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSM3J46CTB 数据手册

 浏览型号SSM3J46CTB的Datasheet PDF文件第2页浏览型号SSM3J46CTB的Datasheet PDF文件第3页浏览型号SSM3J46CTB的Datasheet PDF文件第4页浏览型号SSM3J46CTB的Datasheet PDF文件第5页浏览型号SSM3J46CTB的Datasheet PDF文件第6页 
SSM3J46CTB  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS)  
SSM3J46CTB  
Power Management Switch Applications  
Unit: mm  
0.48+0.02  
-0.03  
0.8 0.05  
±
B
1.5 V drive  
Low ON-resistance:R = 250 m(max) (@V  
A
= -1.5 V)  
= -1.8 V)  
= -2.5 V)  
= -4.5 V)  
on  
GS  
GS  
GS  
GS  
R
on  
R
on  
R
on  
= 178 m(max) (@V  
= 133 m(max) (@V  
= 103 m(max) (@V  
Absolute Maximum Ratings (Ta = 25°C)  
BOTTOM VIEW  
0.05 0.03  
0.45  
0.25  
Characteristic  
Drain-Source voltage  
Symbol  
Rating  
-20  
Unit  
V
±
0.03  
±
M
B
A
0.04  
V
2
DSS  
1
Gate-Source voltage  
V
± 8  
V
GSS  
DC  
I
-2.0  
D
Drain current  
A
Pulse  
I
-4.0  
DP  
Drain power dissipation  
Channel temperature  
P
(Note 1)  
1000  
150  
mW  
°C  
D
3
1. Gate  
2. Source  
3. Drain  
0.70 0.03  
±
B
0.04  
M
A
T
ch  
Storage temperature range  
T
stg  
55 to 150  
°C  
CST3B  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
2-1T1A  
Weight: 1.5 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: Mounted on a FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Marking (top view)  
Pin Condition (top view)  
Equivalent Circuit  
3
1
3
2
S V  
Polarity mark  
(on the top)  
Polarity mark  
1. Gate  
2. Source  
3. Drain  
1
2
*Electrodes: on the bottom  
1
2009-09-28  

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