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SSM3K01F(T5LPP,F) PDF预览

SSM3K01F(T5LPP,F)

更新时间: 2024-11-17 07:04:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 305K
描述
Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SSM3K01F(T5LPP,F) 数据手册

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SSM3K01F  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K01F  
High Speed Switching Applications  
Unit: mm  
Small package  
Low on resistance: Ron = 120 m(max) (V  
= 4 V)  
GS  
GS  
: Ron = 150 m(max) (V  
= 2.5 V)  
Low gate threshold voltage: V = 0.6 to 1.1 V (V  
= 3 V, I = 0.1 mA)  
DS D  
th  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
±10  
V
V
DS  
Gate-source voltage  
V
GSS  
DC  
I
1.3  
D
Drain current  
A
Pulse  
I
2.6  
DP  
Drain power dissipation  
Channel temperature  
P
200  
mW  
°C  
D
ch  
stg  
T
150  
Storage temperature range  
T
55 to 150  
°C  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-3F1F  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Equivalent Circuit  
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
1998-04  
1
2014-03-01  

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