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SSM3K04FU PDF预览

SSM3K04FU

更新时间: 2024-11-09 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 584K
描述
High Speed Switch Applications

SSM3K04FU 技术参数

生命周期:Lifetime Buy零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.29
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM3K04FU 数据手册

 浏览型号SSM3K04FU的Datasheet PDF文件第2页浏览型号SSM3K04FU的Datasheet PDF文件第3页浏览型号SSM3K04FU的Datasheet PDF文件第4页浏览型号SSM3K04FU的Datasheet PDF文件第5页 
SSM3K04FU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K04FU  
High Speed Switch Applications  
Unit: mm  
With built-in gate-source resistor: R  
= 1 M(typ.)  
GS  
2.5 V gate drive  
Low gate threshold voltage: V = 0.7~1.3 V  
th  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
10  
V
V
DS  
Gate-source voltage  
DC drain current  
V
GSS  
I
100  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
100  
D
ch  
stg  
T
150  
T
55~150  
°C  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-70  
2-2E1E  
TOSHIBA  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Equivalent Circuit  
1
2007-11-01  

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