是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 2400107 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | SO Transistor Flat Lead |
Samacsys Footprint Name: | 2-2U1A | Samacsys Released Date: | 2020-04-30 07:41:33 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 2.5 A |
最大漏极电流 (ID): | 2.5 A | 最大漏源导通电阻: | 0.074 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.8 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3K121TU | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type Power Management Switch Applications | |
SSM3K121TU,LF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
SSM3K122TU | TOSHIBA |
获取价格 |
Power Management Switch Applications | |
SSM3K122TU,LF | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
SSM3K123TU | TOSHIBA |
获取价格 |
Power Management Switch Applications | |
SSM3K123TU(T5LCLA) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SSM3K123TU(T5LMAA) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SSM3K123TU(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.2A I(D),SC-70VAR | |
SSM3K123TU,LF | TOSHIBA |
获取价格 |
MOSFET N-CH 20V 4.2A UFM | |
SSM3K123TULF(T | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor |