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SSM3K131TU,LF PDF预览

SSM3K131TU,LF

更新时间： 2024-11-12 09:17:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 201K
描述
Small Signal Field-Effect Transistor

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SSM3K131TU,LF 数据手册

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SSM3K131TU  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)  
SSM3K131TU  
○High-Speed Switching Applications  
Unit: mm  
•
•
4.5-V drive  
Low ON-resistance : R = 41.5 mΩ (max) (@V  
= 4.5 V)  
= 10 V)  
on  
GS  
GS  
2.1±0.1  
1.7±0.1  
: R = 27.6 mΩ (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C)  
1
2
Characteristic  
Drain-Source voltage  
Symbol  
Rating  
30  
Unit  
V
3
V
V
DSS  
Gate-Source voltage  
±20  
V
GSS  
DC  
I
I
(Note 1)  
(Note 1)  
(Note 2)  
(Note 3)  
t = 10 s  
6.0  
D
Drain current  
A
Pulse  
12.0  
DP  
P
800  
D
D
Drain power dissipation  
mW  
P
500  
1000  
150  
Channel temperature  
T
ch  
°C  
°C  
1: Gate  
2: Source  
3: Drain  
Storage temperature range  
T
stg  
−55 to 150  
UFM  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/  
voltage, etc.) are within the absolute maximum ratings.  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
TOSHIBA  
2-2U1A  
Weight: 6.6mg (typ.)  
Note 1: The junction temperature should not exceed 150°C during use.  
Note 2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm )  
Note 3: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )  
2
2
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 10 mA, V  
= 10 mA, V  
= 0 V  
30  
15  
⎯
⎯
⎯
⎯
⎯
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
= -20 V  
= 0 V  
Drain cut-off current  
I
V
V
V
V
= 30 V, V  
⎯
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 20 V, V = 0 V  
DS  
⎯
⎯
±0.1  
2.5  
⎯
V
= 5 V, I = 1 mA  
1.3  
11.5  
⎯
⎯
th  
D
⏐Y ⏐  
= 5 V, I = 4 A  
(Note 4)  
(Note 4)  
(Note 4)  
23.0  
20.5  
27.0  
450  
120  
77  
S
fs  
D
I
I
= 4.0 A, V  
= 2.0 A, V  
= 10 V  
= 4.5 V  
27.6  
41.5  
⎯
D
D
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
⎯
Input capacitance  
C
C
⎯
iss  
V
= 15 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
⎯
⎯
DS  
oss  
C
⎯
⎯
rss  
Q
g
⎯
10.1  
7.6  
2.5  
21  
⎯
V
V
= 15 V, I = 6.0 A  
D
DS  
GS  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Q
Q
⎯
⎯
gs  
= 10 V  
⎯
⎯
gd  
Turn-on time  
Switching time  
t
t
V
V
= 15 V, I = 2.0 A,  
⎯
⎯
on  
off  
DD  
GS  
D
ns  
V
= 0 to 4.5 V, R = 10 Ω  
Turn-off time  
⎯
15  
⎯
G
Drain-Source forward voltage  
Note 4: Pulse test  
V
I
= -6.0 A, V = 0 V  
GS  
(Note 4)  
⎯
-0.85  
-1.2  
DSF  
D
Start of commercial production  
2008-09  
1
2014-03-01  
123456

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