5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号场效应晶体管> SSM3K122TU,LF
SSM3K122TU,LF PDF预览

SSM3K122TU,LF

更新时间： 2024-11-16 13:14:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
6页 141K
描述
Small Signal Field-Effect Transistor

阅读下载

中文翻译

获取价格

SSM3K122TU,LF 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknownFactory Lead Time：12 weeks
风险等级：5.72Base Number Matches：1

SSM3K122TU,LF 数据手册

 浏览型号SSM3K122TU,LF的Datasheet PDF文件第2页浏览型号SSM3K122TU,LF的Datasheet PDF文件第3页浏览型号SSM3K122TU,LF的Datasheet PDF文件第4页浏览型号SSM3K122TU,LF的Datasheet PDF文件第5页浏览型号SSM3K122TU,LF的Datasheet PDF文件第6页 
SSM3K122TU  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type  
SSM3K122TU  
Power Management Switch Applications  
High-Speed Switching Applications  
•
•
1.5 V drive  
Unit: mm  
2.1±0.1  
Low ON-resistance:  
R
on  
R
on  
R
on  
R
on  
= 304 mΩ (max) (@V  
= 1.5 V)  
= 1.8 V)  
= 2.5 V)  
= 4.0 V)  
GS  
= 211 mΩ (max) (@V  
GS  
1.7±0.1  
= 161 mΩ (max) (@V  
= 123 mΩ (max) (@V  
GS  
GS  
1
2
Absolute Maximum Ratings (Ta = 25°C)  
3
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
V
20  
± 10  
2.0  
V
V
DSS  
Gate-Source voltage  
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
4.0  
DP  
P
P
800  
D (Note 1)  
D (Note 2)  
Drain power dissipation  
Channel temperature  
mW  
500  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
−55~150  
stg  
1: Gate  
2: Source  
3: Drain  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
UFM  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2U1A  
Weight: 6.6 mg (typ.)  
Note 1: Mounted on a ceramic board.  
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )  
Note 2: Mounted on a FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0 V  
20  
12  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
V
V
= − 10 V  
= 0 V  
Drain cutoff current  
I
V
V
V
V
= 20 V, V  
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
= ± 10 V, V  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= 0 V  
⎯
±1  
1.0  
⎯
123  
161  
211  
304  
⎯
DS  
= 3 V, I = 1 mA  
V
0.35  
2.6  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
th  
⏐Y ⏐  
D
= 3 V, I = 1.0 A  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
5.2  
87  
S
fs  
D
I
I
I
I
= 1.0 A, V  
= 1.0 A, V  
= 0.5 A, V  
= 0.3 A, V  
= 4.0 V  
= 2.5 V  
= 1.8 V  
= 1.5 V  
D
D
D
D
GS  
GS  
GS  
GS  
112  
147  
182  
195  
35  
Drain-Source ON-resistance  
R
mΩ  
DS (ON)  
Input capacitance  
C
C
iss  
V
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
nC  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
⎯
⎯
⎯
DS  
oss  
C
rss  
Qg  
29  
⎯
3.4  
2.3  
1.1  
8.0  
9.0  
−0.85  
V
V
= 10 V, I = 2.0 A  
D
= 4 V  
DS  
GS  
Gate−Source Charge  
Gate−Drain Charge  
Qgs  
Qgd  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Turn-on time  
Switching time  
t
t
V
V
= 10 V, I = 0.5 A,  
= 0 to 2.5 V, R = 4.7 Ω  
on  
off  
DD  
GS  
D
ns  
V
Turn-off time  
G
Drain-Source forward voltage  
Note 3: Pulse test  
V
I
= −2.0 A, V = 0 V  
GS  
(Note 3)  
⎯
-1.2  
DSF  
D
1
2007-11-01  
123456

中文翻译

下载PDF

与SSM3K122TU,LF相关器件

型号 品牌 获取价格 描述 数据表
SSM3K123TU TOSHIBA

获取价格

 		Power Management Switch Applications
SSM3K123TU(T5LCLA) TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
SSM3K123TU(T5LMAA) TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
SSM3K123TU(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4.2A I(D),SC-70VAR
SSM3K123TU,LF TOSHIBA

获取价格

 		MOSFET N-CH 20V 4.2A UFM
SSM3K123TULF(T TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
SSM3K124TU TOSHIBA

获取价格

 		High Speed Switching Applications
SSM3K124TU(TE85L) TOSHIBA

获取价格

 		MOSFETs Vds=30V Id=2.4A 3Pin
SSM3K127TU TOSHIBA

获取价格

 		Bipolar Small-Signal Transistors
SSM3K128TU TOSHIBA

获取价格

 		Bipolar Small-Signal Transistors

与SSM3K122TU,LF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证