Datasheet > SSM3K15AFS(TE85L)

SSM3K15AFS(TE85L)

更新时间： 2024-11-11 21:21:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	206K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416VAR

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SSM3K15AFS(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.1 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

SSM3K15AFS(TE85L) 数据手册

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SSM3K15AFS

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

SSM3K15AFS

Load Switching Applications

Unit: mm

•

2.5 V drive

Low ON-resistance: R

= 3.6 Ω (max) (@V

= 6.0 Ω (max) (@V

= 4 V)

= 2.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

± 20

DSS

Gate-Source voltage

GSS

100

Drain current

Pulse

400

Power dissipation

100

°C

1. Gate

Channel temperature

Storage temperature range

150

2. Source

3. Drain

stg

−55 to 150

°C

SSM

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Marking

Equivalent Circuit (top view)

2010-11-29

12 3 4 5

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