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SSM3K15FS PDF预览

SSM3K15FS

更新时间: 2024-11-10 22:34:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
6页 148K
描述
High Speed Switching Applications Analog Switching Applications

SSM3K15FS 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.57Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e2
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN SILVER端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM3K15FS 数据手册

 浏览型号SSM3K15FS的Datasheet PDF文件第2页浏览型号SSM3K15FS的Datasheet PDF文件第3页浏览型号SSM3K15FS的Datasheet PDF文件第4页浏览型号SSM3K15FS的Datasheet PDF文件第5页浏览型号SSM3K15FS的Datasheet PDF文件第6页 
                                                        
                                                        
SSM3K15FS  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K15FS  
High Speed Switching Applications  
Analog Switching Applications  
Unit: mm  
·
·
Compact package suitable for high-density mounting  
Low ON-resistance  
: R = 4.0 (max) (@V  
= 4 V)  
on  
GS  
: R = 7.0 (max) (@V  
on  
= 2.5 V)  
GS  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-Source voltage  
Gate-Source voltage  
V
30  
±20  
V
V
DS  
V
GSS  
DC  
Drain current  
I
100  
D
mA  
Pulse  
I
200  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
100  
mW  
°C  
D
ch  
stg  
T
150  
Storage temperature range  
T
-55~150  
°C  
JEDEC  
JEITA  
TOSHIBA  
2-2H1B  
Marking  
Equivalent Circuit  
Weight: 2.4 mg (typ.)  
3
3
D P  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the  
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and  
containers and other objects that come into direct contact with devices should be made of anti-static materials.  
1
2001-12-04  

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