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SSM3K15FU(T5LNOBIF

更新时间： 2024-11-11 20:51:35
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 208K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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中文翻译

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SSM3K15FU(T5LNOBIF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.6
配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：30 V
最大漏极电流 (ID)：0.1 A最大漏源导通电阻：7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM3K15FU(T5LNOBIF 数据手册

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SSM3K15FU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K15FU  
High Speed Switching Applications  
Analog Switch Applications  
Unit: mm  
•
•
Small package  
Low on resistance  
: R = 4.0 Ω (max) (@V  
= 4 V)  
on  
GS  
: R = 7.0 Ω (max) (@V  
= 2.5 V)  
on  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
±20  
V
V
DS  
Gate-source voltage  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
P (Note 1)  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
150  
mW  
°C  
D
T
150  
ch  
Storage temperature  
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
JEDEC  
JEITA  
―
SC-70  
2-2E1E  
TOSHIBA  
Note 1: Mounted on FR4 board  
Weight: 0.006 g (typ.)  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3)  
0.6 mm  
1.0 mm  
Marking  
Equivalent Circuit  
3
3
D P  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2001-02  
1
2014-03-01  
12345

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