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SSM3K15FV(L3SMMD,Z

更新时间： 2024-01-29 18:57:22
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 155K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET

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SSM3K15FV(L3SMMD,Z 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.6
配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：30 V
最大漏极电流 (ID)：0.1 A最大漏源导通电阻：7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM3K15FV(L3SMMD,Z 数据手册

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SSM3K15FV  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K15FV  
High Speed Switching Applications  
Unit: mm  
Analog Switch Applications  
1.2±0.05  
0.8±0.05  
•
•
Optimum for high-density mounting in small packages  
Low on-resistance  
: R  
: R  
= 4.0 Ω (max) (@V  
= 7.0 Ω (max) (@V  
= 4 V)  
DS(ON)  
GS  
= 2.5 V)  
DS(ON)  
GS  
1
Absolute Maximum Ratings (Ta = 25°C)  
3
2
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
±20  
V
V
DS  
Gate-source voltage  
V
D
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
1. Gate  
2. Source  
3. Drain  
Power dissipation  
P
(Note 1)  
150  
mW  
°C  
Channel temperature  
Storage temperature  
T
ch  
150  
VESM  
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
-
-
TOSHIBA  
2-1L1B  
Weight: 1.5 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)  
0.5mm  
0.45mm  
0.45mm  
0.4mm  
Marking  
Equivalent Circuit  
3
3
D P  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  
12345

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