SSM3K15FU(F)

更新时间： 2024-11-11 13:14:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号场效应晶体管
页数	文件大小	规格书
5页	216K
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数据手册

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SSM3K15FU(F) 数据手册

SSM3K15ACT

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

SSM3K15ACT

Load Switching Applications

Unit: mm

•

2.5 V drive

Low ON-resistance: R

= 3.6 Ω (max) (@V

= 6.0 Ω (max) (@V

= 4 V)

= 2.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

± 20

DSS

Gate-Source voltage

GSS

100

Drain current

Pulse

400

Power dissipation

P (Note 1)

100

°C

Channel temperature

Storage temperature range

150

stg

−55 to 150

°C

CST3

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

―

JEITA

TOSHIBA

2-1J1B

Weight: 0.75 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm )

Marking (Top View)

Pin Condition (Top View)

Equivalent Circuit

Polarity mark

Polarity mark (on the top)

1. Gate

2. Source

3. Drain

*Electrodes: On the bottom

2010-11-29

12 3 4 5

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