Datasheet > SSM3K09FU_07

SSM3K09FU_07

更新时间： 2024-11-16 03:14:31

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	207K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM3K09FU_07 数据手册

SSM3K09FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K09FU

High Speed Switching Applications

Unit: mm

•

Small package

Low on resistance

: R = 0.7 Ω (max) (@V

= 10 V)

= 4 V)

: R = 1.2 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±20

Gate-Source voltage

GSS

400

Drain current

Pulse

800

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note 1)

150

°C

150

Storage temperature

−55~150

°C

JEDEC

JEITA

―

stg

SC-70

2-2E1E

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

Weight: 0.006 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3) Figure 1.

Marking

Equivalent Circuit

(top view)

25.4 mm × 25.4 mm × 1.6 t,

Cu Pad: 0.6 mm²× 3

Figure 1:

0.6 mm

1.0 mm

D J

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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