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SSM3K104TU,LSOYF(T

更新时间： 2024-11-18 13:14:03
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东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
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SSM3K104TU  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type  
SSM3K104TU  
Power Management Switch Applications  
High-Speed Switching Applications  
Unit: mm  
•
•
1.8 V drive  
Low ON-resistance:  
R
on  
R
on  
R
on  
= 110 mΩ (max) (@V  
= 1.8 V)  
= 2.5 V)  
= 4.0 V)  
GS  
2.1±0.1  
1.7±0.1  
=
=
74 mΩ (max) (@V  
GS  
GS  
56 mΩ (max) (@V  
Absolute Maximum Ratings (Ta = 25°C)  
1
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
3
2
V
20  
± 12  
3.0  
DS  
Gate-Source voltage  
V
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
6.0  
DP  
P
P
800  
D (Note 1)  
D (Note 2)  
Drain power dissipation  
Channel temperature  
mW  
500  
T
150  
°C  
°C  
ch  
1: Gate  
Storage temperature range  
T
−55~150  
stg  
2: Source  
3: Drain  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
UFM  
UFM  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2U1A  
Weight: 6.6 mg (typ.)  
Note 1: Mounted on a ceramic board.  
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )  
Note 2: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
I
= 1 mA, V  
= 1 mA, V  
= 0  
20  
12  
⎯
⎯
⎯
⎯
⎯
⎯
1
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
V
V
= −12 V  
Drain cutoff current  
I
V
V
V
V
= 20 V, V  
= 0  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
= ±12 V, V  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= 0  
⎯
0.4  
6
⎯
⎯
10  
44  
±1  
1.0  
⎯
GSS  
DS  
V
= 3 V, I = 1 mA  
th  
D
⏐Y ⏐  
= 3 V, I = 2.0 A  
(Note 3)  
(Note 3)  
S
fs  
D
I
= 2.0 A, V  
= 4.0 V  
⎯
56  
D
GS  
Drain-Source ON-resistance  
R
mΩ  
DS (ON)  
I
I
= 1.0 A, V  
= 0.5 A, V  
= 2.5 V  
= 1.8 V  
(Note 3)  
(Note 3)  
⎯
⎯
53  
70  
74  
D
D
GS  
GS  
110  
Input capacitance  
C
V
V
V
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
⎯
⎯
⎯
⎯
320  
62  
⎯
⎯
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
C
oss  
pF  
ns  
V
Reverse transfer capacitance  
C
51  
⎯
rss  
on  
Turn-on time  
Switching time  
t
t
18  
⎯
V
V
= 10 V, I = 2 A,  
D
DD  
GS  
= 0~2.5 V, R = 4.7 Ω  
G
Turn-off time  
14  
⎯
⎯
⎯
off  
Drain-Source forward voltage  
Note 3: Pulse test  
V
I
= −3.0 A, V = 0 V  
GS  
(Note 3)  
−0.85  
−1.2  
DSF  
D
1
2007-11-01  
12345

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