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SSM3K106TU(TE85L) PDF预览

SSM3K106TU(TE85L)

更新时间： 2024-11-18 20:45:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 178K
描述
MOSFETs Vds=20V Id=1.2A 3Pin

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中文翻译

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SSM3K106TU(TE85L) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.7Base Number Matches：1

SSM3K106TU(TE85L) 数据手册

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SSM3K106TU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K106TU  
High-Speed Switching Applications  
Unit: mm  
•
•
4 V drive  
2.1±0.1  
1.7±0.1  
Low ON-resistance:  
R
R
= 530 mΩ (max) (@V  
= 310 mΩ (max) (@V  
= 4 V)  
on  
GS  
GS  
= 10 V)  
on  
Absolute Maximum Ratings (Ta = 25°C)  
1
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
3
2
V
20  
± 20  
V
V
DS  
Gate-source voltage  
V
GSS  
DC  
I
1.2  
D
Drain current  
A
Pulse  
I
2.4  
DP  
P
P
800  
D (Note 1)  
D (Note 2)  
Drain power dissipation  
Channel temperature  
mW  
500  
1: Gate  
2: Source  
3: Drain  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
UFM  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2U1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
Weight: 6.6 mg (typ.)  
Note 1: Mounted on a ceramic board.  
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )  
Note 2: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Conditions  
= 1 mA, V = 0  
Min  
Typ.  
Max  
Unit  
Drain-source breakdown voltage  
Drain cutoff current  
V
I
20  
⎯
⎯
⎯
⎯
1
V
μA  
μA  
V
(BR) DSS  
D
GS  
= 20 V, V  
I
V
V
V
V
= 0  
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
= ±20 V, V  
Gate leakage current  
I
= 0  
⎯
⎯
±1  
DS  
Gate threshold voltage  
Forward transfer admittance  
V
= 5 V, I = 0.1 mA  
1.1  
0.58  
⎯
⎯
2.3  
⎯
th  
D
⏐Y ⏐  
= 5 V, I = 0.6 A  
(Note 3)  
(Note 3)  
(Note 3)  
1.16  
230  
390  
36  
S
fs  
D
I
I
= 0.6 A, V  
= 10 V  
= 4 V  
310  
530  
⎯
D
D
GS  
GS  
Drain-source ON-resistance  
R
mΩ  
DS (ON)  
= 0.6 A, V  
⎯
Input capacitance  
C
V
V
V
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
⎯
pF  
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
C
⎯
30  
⎯
oss  
Reverse transfer capacitance  
C
t
⎯
10  
⎯
rss  
Turn-on time  
Switching time  
⎯
21  
⎯
V
V
= 10 V, I = 0.6 A,  
on  
off  
DD  
GS  
D
ns  
V
= 0 to 4 V, R = 10 Ω  
Turn-off time  
t
⎯
8
⎯
G
Drain-source forward voltage  
Note 3: Pulse test  
V
I
= −1.2 A, V = 0 V  
GS  
(Note 3)  
⎯
−1.0  
−1.4  
DSF  
D
Start of commercial production  
2005-02  
1
2014-03-01  
123456

中文翻译

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