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SSM3K107TU(TE85L)

更新时间： 2024-09-29 21:03:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 178K
描述
MOSFETs Vds=20V Id=1.5A 3Pin

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中文翻译

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SSM3K107TU(TE85L) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.61Base Number Matches：1

SSM3K107TU(TE85L) 数据手册

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SSM3K107TU  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K107TU  
High-Speed Switching Applications  
Unit: mm  
•
•
4 V drive  
Low ON-resistance:  
R
R
= 410 mΩ (max) (@V  
= 200 mΩ (max) (@V  
= 4V)  
on  
GS  
GS  
2.1±0.1  
1.7±0.1  
= 10V)  
on  
Absolute Maximum Ratings (Ta = 25°C)  
1
2
Characteristic  
Drain–source voltage  
Symbol  
Rating  
Unit  
3
V
20  
± 20  
1.5  
V
V
DS  
Gate–source voltage  
V
GSS  
DC  
I
D
Drain current  
A
Pulse  
I
3.0  
DP  
P
P
800  
D (Note 1)  
D (Note 2)  
Drain power dissipation  
Channel temperature  
mW  
500  
T
150  
°C  
°C  
ch  
1: Gate  
Storage temperature range  
T
−55~150  
stg  
2: Source  
3: Drain  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
UFM  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2U1A  
Weight: 6.6 mg (typ.)  
Note 1: Mounted on a ceramic board.  
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )  
Note 2: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Drain–source breakdown voltage  
Drain cutoff current  
Symbol  
Test Condition  
Min  
20  
Typ.  
⎯
Max  
⎯
Unit  
V
V
I
= 1 mA, V  
= 0  
(BR) DSS  
D
GS  
I
V
V
V
V
= 20 V, V  
= 0  
⎯
⎯
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
GS  
= ± 20 V, V  
Gate leakage current  
I
= 0  
⎯
⎯
±1  
2.3  
⎯
DS  
Gate threshold voltage  
V
= 5 V, I = 0.1 mA  
1.1  
0.68  
⎯
th  
D
Forward transfer admittance  
⏐Y ⏐  
= 5 V, I = 0.6 A  
(Note 3)  
1.36  
S
fs  
D
I
I
= 0.6 A, V  
= 10 V  
= 4 V  
(Note 3)  
(Note 3)  
⎯
⎯
⎯
135  
250  
60  
200  
410  
⎯
D
D
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
= 0.6 A, V  
Input capacitance  
C
V
= 10 V, V  
= 0, f = 1 MHz  
pF  
pF  
iss  
DS  
GS  
Output capacitance  
C
V
V
= 10 V, V  
= 10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
⎯
⎯
⎯
⎯
⎯
47  
17  
⎯
⎯
⎯
oss  
DS  
DS  
GS  
GS  
pF  
ns  
V
Reverse transfer capacitance  
C
rss  
on  
Turn-on time  
Switching time  
t
t
19  
V
V
= 10 V, I = 0.6 A,  
D
DD  
GS  
= 0 to 4 V, R = 10 Ω  
G
Turn-off time  
10  
⎯
off  
Drain–source forward voltage  
Note 3: Pulse test  
V
I
= − 1.5 A, V = 0 V  
GS  
(Note 3)  
– 0.9  
– 1.2  
DSF  
D
1
2007-11-01  
123456

中文翻译

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