Datasheet > SSM3K05FU_07

SSM3K05FU_07

更新时间： 2024-11-21 04:02:43

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	609K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM3K05FU_07 数据手册

SSM3K05FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K05FU

High Speed Switching Applications

•

Small package

Low on resistance: R = 0.8 Ω max (@V

Unit: mm

= 4 V)

= 2.5 V)

: R = 1.2 Ω max (@V

•

Low gate threshold voltage

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

±12

400

800

GSS

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

150

(Note 1)

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

SC-70

2-2E1E

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

TOSHIBA

Weight: 0.006 g (typ.)

Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.6 mm²× 3)

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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