Datasheet > SSM3K01T(TE85L,F)

SSM3K01T(TE85L,F)

更新时间： 2024-11-18 15:52:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	210K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,3.2A I(D),TO-236

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SSM3K01T(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	配置：	Single
最大漏极电流 (Abs) (ID)：	3.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.25 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

SSM3K01T(TE85L,F) 数据手册

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SSM3K01T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K01T

High Speed Switching Applications

Unit: mm

•

Small Package

Low on Resistance: R = 120 mΩ (max) (@V

= 4 V)

= 2.5 V)

: R = 150 mΩ (max) (@V

•

Low Gate Threshold Voltage: V = 0.6 to 1.1 V

(@V

= 3 V, I = 0.1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

±10

3.2

Gate-Source voltage

GSS

Drain current

(Note 2)

Pulse

6.4

Drain power dissipation (Ta = 25°C)

1250

(Note 1)

Channel temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3S1A

Weight: 10 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm², t = 10 s)

Note 2: The pulse width limited by max channel temperature.

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the

environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and

containers and other objects that come into direct contact with devices should be made of anti-static materials.

The Channel-to-Ambient thermal resistance R

and the drain power dissipation P vary according to

th (ch-a)

the board material, board area, board thickness and pad area, and are also affected by the environment in

which the product is used. When using this device, please take heat dissipation fully into account.

Start of commercial production

2000-04

2014-03-01

12 3 4 5

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SSM3K02F_07	TOSHIBA	获取价格	High Speed Switching Applications
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