Datasheet > SSM3K03FE_07

SSM3K03FE_07

更新时间： 2024-09-29 04:02:43

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	569K
描述
High Speed Switching Applications

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数据手册

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SSM3K03FE_07 数据手册

SSM3K03FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K03FE

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

2.5 V gate drive

High input impedance

Low gate threshold voltage: V = 0.7~1.3 V

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

DC drain current

GSS

100

°C

Drain power dissipation

Channel temperature

Storage temperature range

100

stg

150

JEDEC

JEITA

―

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2HA1B

Weight: 2.3 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

2007-11-01

12 3 4 5

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