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SSM3K03FE_07 PDF预览

SSM3K03FE_07

更新时间: 2024-11-18 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 569K
描述
High Speed Switching Applications

SSM3K03FE_07 数据手册

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SSM3K03FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K03FE  
High Speed Switching Applications  
Unit: mm  
Analog Switch Applications  
2.5 V gate drive  
High input impedance  
Low gate threshold voltage: V = 0.7~1.3 V  
th  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
10  
V
V
DS  
Gate-source voltage  
DC drain current  
V
GSS  
I
100  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
100  
D
ch  
stg  
T
150  
JEDEC  
JEITA  
T
55~150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2HA1B  
Weight: 2.3 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Marking  
Equivalent Circuit  
1
2007-11-01  

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