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SSM3K03FV PDF预览

SSM3K03FV

更新时间: 2024-11-09 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 526K
描述
High Speed Switching Applications

SSM3K03FV 技术参数

生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.28
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSM3K03FV 数据手册

 浏览型号SSM3K03FV的Datasheet PDF文件第2页浏览型号SSM3K03FV的Datasheet PDF文件第3页浏览型号SSM3K03FV的Datasheet PDF文件第4页浏览型号SSM3K03FV的Datasheet PDF文件第5页 
SSM3K03FV  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K03FV  
High Speed Switching Applications  
Unit: mm  
Analog Switch Applications  
1.2±0.05  
0.8±0.05  
2.5 V gate drive  
High input impedance  
1
Low gate threshold voltage: V = 0.7~1.3 V  
th  
Optimum for high-density mounting in small packages  
3
2
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
20  
10  
V
V
DS  
1.Gate  
Gate-source voltage  
V
GSS  
2.Source  
3.Drain  
DC drain current  
I
100  
mA  
mW  
°C  
D
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
150  
D
VESM  
T
150  
ch  
JEDEC  
JEITA  
Storage temperature range  
T
55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2L1B  
Weight: 1.5 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating, mounted on FR4 board  
0.5mm  
0.45mm  
0.45mm  
0.4mm  
Marking  
Equivalent Circuit  
120  
3
3
DA  
1
2
1
2
1
2007-11-01  

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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,400MA I(D),SC-70