Datasheet > SSM3K02F_07

SSM3K02F_07

更新时间： 2024-11-09 04:02:43

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	592K
描述
High Speed Switching Applications

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中文翻译

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数据手册

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SSM3K02F_07 数据手册

SSM3K02F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02F

High Speed Switching Applications

Unit: mm

•

Small package

Low on resistance: R = 200 mΩ (max) (V

= 4 V)

: R = 250 mΩ (max) (V

= 2.5 V)

•

Low gate threshold voltage: V = 0.6~1.1 V (V

= 3 V, I = 0.1 mA)

DS D

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±10

Gate-source voltage

GSS

1.0

Drain current

Pulse

2.0

Drain power dissipation

Channel temperature

200

°C

stg

150

Storage temperature range

−55~150

°C

JEDEC

JEITA

TO-236MOD

SC-59

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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