Datasheet > SSM3K02T(TE85L)

SSM3K02T(TE85L)

更新时间： 2024-11-16 14:36:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	218K
描述
SSM3K02T(TE85L)

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中文翻译

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技术参数
数据手册

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SSM3K02T(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

SSM3K02T(TE85L) 数据手册

SSM3K02T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02T

High Speed Switching Applications

Unit: mm

•

Small package

Low on resistance: R = 200 mΩ (max) (V

= 4 V)

: R = 250 mΩ (max) (V

= 2.5 V)

•

Low gate threshold voltage: V = 0.6~1.1 V (V

= 3 V, I = 0.1 mA)

DS D

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±10

2.5

5.0

Gate-source voltage

GSS

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

1250

(Note 1)

JEDEC

JEITA

―

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-3S1A

Weight: 0.01 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)

Note 2: The pulse width limited by max channel temperature.

Marking

Equivalent Circuit

K U

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

中文翻译

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