Datasheet > SSM3K03FE(TPL3,F)

SSM3K03FE(TPL3,F)

更新时间： 2024-11-18 15:52:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	313K
描述
Small Signal Field-Effect Transistor

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SSM3K03FE(TPL3,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.19
Base Number Matches：	1

SSM3K03FE(TPL3,F) 数据手册

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SSM3K03FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K03FE

High Speed Switching Applications

Unit: mm

Analog Switch Applications

•

2.5 V gate drive

High input impedance

Low gate threshold voltage: V = 0.7~1.3 V

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Gate-source voltage

DC drain current

GSS

100

°C

Drain power dissipation

Channel temperature

Storage temperature range

100

stg

150

JEDEC

JEITA

―

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-2HA1B

Weight: 2.3 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Equivalent Circuit

2007-11-01

12 3 4 5

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