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SSM3K01T_07 PDF预览

SSM3K01T_07

更新时间: 2024-11-18 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 184K
描述
High Speed Switching Applications

SSM3K01T_07 数据手册

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SSM3K01T  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM3K01T  
High Speed Switching Applications  
Unit: mm  
Small Package  
Low on Resistance: R = 120 m(max) (@V  
= 4 V)  
= 2.5 V)  
on  
GS  
GS  
: R = 150 m(max) (@V  
on  
Low Gate Threshold Voltage: V = 0.6~1.1 V  
th  
(@V  
= 3 V, I = 0.1 mA)  
D
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
30  
±10  
3.2  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
D
Drain current  
A
I
DP  
(Note 2)  
Pulse  
6.4  
P
D
Drain power dissipation (Ta = 25°C)  
1250  
mW  
(Note 1)  
Channel temperature  
T
150  
°C  
°C  
ch  
JEDEC  
JEITA  
Storage temperature range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-3S1A  
Weight: 10 mg (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)  
Note 2: The pulse width limited by max channel temperature.  
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the  
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and  
containers and other objects that come into direct contact with devices should be made of anti-static materials.  
The Channel-to-Ambient thermal resistance R  
and the drain power dissipation P vary according to  
D
th (ch-a)  
the board material, board area, board thickness and pad area, and are also affected by the environment in  
which the product is used. When using this device, please take heat dissipation fully into account.  
1
2007-11-01  

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