SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
Unit: mm
•
•
Small Package
Low on Resistance: R = 120 mΩ (max) (@V
= 4 V)
= 2.5 V)
on
GS
GS
: R = 150 mΩ (max) (@V
on
•
Low Gate Threshold Voltage: V = 0.6~1.1 V
th
(@V
= 3 V, I = 0.1 mA)
D
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Symbol
Rating
Unit
V
30
±10
3.2
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
I
DP
(Note 2)
Pulse
6.4
P
D
Drain power dissipation (Ta = 25°C)
1250
mW
(Note 1)
Channel temperature
T
150
°C
°C
ch
JEDEC
JEITA
―
―
Storage temperature range
T
stg
−55~150
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
and the drain power dissipation P vary according to
D
th (ch-a)
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1
2007-11-01