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SSM3J65CTC

更新时间： 2024-11-19 14:58:27

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SSM3J65CTC 数据手册

SSM3J65CTC

MOSFETs Silicon P-Channel MOS

SSM3J65CTC

1. Applications

•

Power Management Switches

2. Features

(1) 1.2 V drive

(2) Low drain-source on-resistance

: RDS(ON) = 1110 mΩ (typ.) (@VGS = -1.2 V)

RDS(ON) = 780 mΩ (typ.) (@VGS = -1.5 V)

RDS(ON) = 650 mΩ (typ.) (@VGS = -1.8 V)

RDS(ON) = 510 mΩ (typ.) (@VGS = -2.5 V)

RDS(ON) = 400 mΩ (typ.) (@VGS = -4.5 V)

3. Packaging and Pin Assignment

CST3C

Start of commercial production

2017-09

2021-03-11

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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