Datasheet > SSM3J56ACT

SSM3J56ACT

更新时间： 2024-11-06 14:56:55

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SSM3J56ACT 数据手册

SSM3J56ACT

MOSFETs Silicon P-Channel MOS

SSM3J56ACT

1. Applications

•

High-Speed Switching

2. Features

(1) 1.2 V drive

(2) Low drain-source on-resistance

: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V)

RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V)

RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)

RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V)

RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V)

3. Packaging and Pin Assignment

1: Gate

2: Source

3: Drain

CST3

Start of commercial production

2015-11

2022-11-25

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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