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SSM3J56ACT PDF预览

SSM3J56ACT

更新时间: 2024-11-19 14:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 305K
描述
P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)

SSM3J56ACT 数据手册

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SSM3J56ACT  
MOSFETs Silicon P-Channel MOS  
SSM3J56ACT  
1. Applications  
High-Speed Switching  
2. Features  
(1) 1.2 V drive  
(2) Low drain-source on-resistance  
: RDS(ON) = 390 m(max) (@VGS = -4.5 V)  
RDS(ON) = 480 m(max) (@VGS = -2.5 V)  
RDS(ON) = 660 m(max) (@VGS = -1.8 V)  
RDS(ON) = 900 m(max) (@VGS = -1.5 V)  
RDS(ON) = 4000 m(max) (@VGS = -1.2 V)  
3. Packaging and Pin Assignment  
1: Gate  
2: Source  
3: Drain  
CST3  
Start of commercial production  
2015-11  
©2015-2022  
2022-11-25  
Rev.3.0  
1
Toshiba Electronic Devices & Storage Corporation  

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