5秒后页面跳转
SSM3J09FU(T5LPED,F PDF预览

SSM3J09FU(T5LPED,F

更新时间: 2024-11-25 06:11:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 211K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

SSM3J09FU(T5LPED,F 数据手册

 浏览型号SSM3J09FU(T5LPED,F的Datasheet PDF文件第2页浏览型号SSM3J09FU(T5LPED,F的Datasheet PDF文件第3页浏览型号SSM3J09FU(T5LPED,F的Datasheet PDF文件第4页浏览型号SSM3J09FU(T5LPED,F的Datasheet PDF文件第5页 
SSM3J09FU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM3J09FU  
Management Switch  
Unit: mm  
High Speed Switching Applications  
Small package  
Low on resistance: R = 2.7 (max) (@V  
= 10 V)  
= 4 V)  
on  
GS  
GS  
: R = 4.2 (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
30  
±20  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
200  
D
Drain current  
mA  
Pulse  
I
400  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
150  
mW  
°C  
D
T
ch  
150  
JEDEC  
JEITA  
Storage temperature  
T
55 to 150  
°C  
stg  
SC-70  
2-2E1E  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) Figure 1.  
Marking  
Equivalent Circuit  
(top view)  
Figure 1: 25.4 mm  
× 25.4 mm × 1.6 t,  
Cu Pad: 0.6 mm2 × 3  
3
3
0.6 mm  
1.0 mm  
D K  
1
2
1
2
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is  
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
Start of commercial production  
2000-01  
1
2014-03-01  

与SSM3J09FU(T5LPED,F相关器件

型号 品牌 获取价格 描述 数据表
SSM3J09FU(T5LSAN,F TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
SSM3J09FU(TE85L,F) TOSHIBA

获取价格

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,200MA I(D),SOT-323
SSM3J09FU,LF TOSHIBA

获取价格

Small Signal Field-Effect Transistor
SSM3J09FUTE85L TOSHIBA

获取价格

200mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
SSM3J108TU TOSHIBA

获取价格

Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
SSM3J108TU(TE85L) TOSHIBA

获取价格

MOSFETs Vds=-20V Id=-1.8A 3Pin
SSM3J108TU(TE85L,F) TOSHIBA

获取价格

Small Signal Field-Effect Transistor
SSM3J108TU,LF(T TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SSM3J109TU TOSHIBA

获取价格

Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications Hi
SSM3J109TU,LF(T TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-O