生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 4.6 A |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 0.046 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM3J129TU(TE85L) | TOSHIBA |
获取价格 |
MOSFET P-CH 20V 4.6A UFM | |
SSM3J129TU,LF(T | TOSHIBA |
获取价格 |
暂无描述 | |
SSM3J130TU | TOSHIBA |
获取价格 |
Field-Effect Transistor Silicon P-Channel MOS | |
SSM3J132TU | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors | |
SSM3J133TU | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon P-Cha | |
SSM3J133TU,LF | TOSHIBA |
获取价格 |
MOSFET P-CH 20V 5.5A | |
SSM3J134TU | TOSHIBA |
获取价格 |
TOSHIBA Field-Effect Transistor Silicon P-Cha | |
SSM3J134TU,LF(T | TOSHIBA |
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Small Signal Field-Effect Transistor | |
SSM3J135TU | TOSHIBA |
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TOSHIBA Field-Effect Transistor Silicon P-Cha | |
SSM3J135TU | KEXIN |
获取价格 |
P-Channel MOSFET |