Datasheet > SSM3J14T(T5LPAS,E)

SSM3J14T(T5LPAS,E)

更新时间： 2024-01-15 08:01:36

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	221K
描述
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SSM3J14T(T5LPAS,E) 数据手册

浏览型号SSM3J14T(T5LPAS,E)的Datasheet PDF文件第2页

浏览型号SSM3J14T(T5LPAS,E)的Datasheet PDF文件第3页

浏览型号SSM3J14T(T5LPAS,E)的Datasheet PDF文件第4页

SSM3J14T

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J14T

Power Management Switch

DC-DC Converters

Unit: mm

•

Suitable for high-density mounting due to compact package

Low on Resistance: R = 145 mΩ (max) (@V = −4.5 V)

: R = 85 mΩ (max) (@V

= −10 V)

•

High-speed switching

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

−30

±20

−2.7

Gate-Source voltage

GSS

Drain current

Pulse

−5.4

(Note 2)

t = 10 s

(Note 1)

1.25

0.7

Drain power dissipation

Channel temperature

JEDEC

JEITA

―

150

°C

TOSHIBA

2-3S1A

Storage temperature range

−55 to 150

stg

Weight: 10 mg (typ.)

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)

Note 2: The pulse width limited by maximum channel temperature.

Marking

Equivalent Circuit

KDL

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

The Channel-to-Ambient thermal resistance R

and the drain power dissipation P vary according to the

th (ch-a)

board material, board area, board thickness and pad area, and are also affected by the environment in which the

product is used. When using this device, please take heat dissipation fully into account

Start of commercial production

2001-07

2014-03-01

12 3 4 5 6

下载PDF

与SSM3J14T(T5LPAS,E)相关器件

型号	品牌	描述	获取价格	数据表
SSM3J14T(TE85L)	TOSHIBA	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.7A I(D),SOT-346	获取价格
SSM3J14T(TE85L,F)	TOSHIBA	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.7A I(D),SOT-346	获取价格
SSM3J14T(TE85LF)	TOSHIBA	Small Signal Field-Effect Transistor	获取价格
SSM3J14T_07	TOSHIBA	Power Management Switch DC-DC Converters	获取价格
SSM3J15CT	TOSHIBA	Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analo	获取价格
SSM3J15CT(TPL3)	TOSHIBA	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-883	获取价格