生命周期: | Obsolete | 包装说明: | 2-1B1B, TESM, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.6 | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 0.1 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SSM3J15FS(T5LCK,E) | TOSHIBA | Small Signal Field-Effect Transistor |
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SSM3J15FS(T5LIMASF | TOSHIBA | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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SSM3J15FS(TE85L) | TOSHIBA | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416 |
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SSM3J15FS,LF | TOSHIBA | 暂无描述 |
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SSM3J15FS,LF(T | TOSHIBA | 暂无描述 |
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SSM3J15FU | TOSHIBA | Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analo |
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