SSM3J15F
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15F
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
•
Small package
+0.5
Low ON resistance : R = 12 Ω (max) (@V
= −4 V)
= −2.5 V)
2.5-0.3
on
GS
GS
+0.25
1.5-0.15
: R = 32 Ω (max) (@V
on
Absolute Maximum Ratings (Ta = 25°C)
1
2
3
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
−30
±20
V
V
DS
Gate-Source voltage
V
GSS
DC
I
−100
D
Drain current
mA
Pulse
I
−200
DP
Drain power dissipation (Ta = 25°C)
Channel temperature
P
200
mW
°C
D
ch
stg
1.Gate
2.Source
3.Drain
T
150
Storage temperature range
T
−55 to 150
°C
S-MINI
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
TO-236MOD
SC-59
TOSHIBA
2-3F1F
Weight: 0.012g(typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking
Equivalent Circuit (top view)
3
3
D Q
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2002-03
1
2014-03-01