Datasheet > SSM3J15F(TE85L,F)

SSM3J15F(TE85L,F)

更新时间： 2024-02-15 18:14:22

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	175K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),TO-236VAR

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SSM3J15F(TE85L,F) 数据手册

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SSM3J15F

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J15F

High Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Small package

+0.5

Low ON resistance : R = 12 Ω (max) (@V

= −4 V)

= −2.5 V)

2.5-0.3

+0.25

1.5-0.15

: R = 32 Ω (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

−30

±20

Gate-Source voltage

GSS

−100

−200

200

Drain current

Pulse

Drain power dissipation (Ta = 25°C)

Channel temperature

°C

stg

1.Gate

2.Source

3.Drain

150

Storage temperature range

−55~150

°C

S-MINI

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

TO-236MOD

SC-59

TOSHIBA

2-3F1F

Weight: 0.012g(typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Marking

Equivalent Circuit (top view)

D Q

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2007-11-01

12 3 4 5

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