Datasheet > SSM3J13T(TE85L)

SSM3J13T(TE85L)

更新时间： 2024-11-20 20:11:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	218K
描述
SSM3J13T(TE85L)

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SSM3J13T(TE85L) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.57	Base Number Matches：	1

SSM3J13T(TE85L) 数据手册

SSM3J13T

TOSHIBA Field Effect Transistor

Silicon P Channel MOS Type (U-MOSII)

SSM3J13T

Power Management Switch

Unit: mm

High Speed Switching Applications

•

Small Package

Low on Resistance: R = 70 mΩ (max) (@V

= −4 V)

= −2.5 V)

: R = 95 mΩ (max) (@V

•

Low Gate Threshold Voltage

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

−12

±8

Gate-Source voltage

GSS

−3.0

Drain current

Pulse

−6.0

(Note 2)

Drain power dissipation

Channel temperature

1.25

JEDEC

JEITA

―

(Note 1)

150

°C

Storage temperature range

stg

−55~150

TOSHIBA

2-3S1A

Weight: 10 mg (typ.)

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)

Note 2: The pulse width limited by max channel temperature.

Marking

Equivalent Circuit

KDH

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the

environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and

containers and other objects that come into direct contact with devices should be made of anti-static materials.

The Channel-to-Ambient thermal resistance R

and the drain power dissipation P vary according to

th (ch-a)

the board material, board area, board thickness and pad area, and are also affected by the environment in

which the product is used. When using this device, please take heat dissipation fully into account

2007-11-01

12 3 4 5 6

中文翻译

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与SSM3J13T(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
SSM3J13T(TE85L,F)	TOSHIBA	获取价格	SSM3J13T(TE85L,F)
SSM3J13T_07	TOSHIBA	获取价格	Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J140TU	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -4.4 A, 0.0258 Ω@4.5V, SO
SSM3J143TU	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SO
SSM3J144TU	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -3.2 A, 0.093 Ω@4.5V, SOT
SSM3J145TU	TOSHIBA	获取价格	P-ch MOSFET, -20 V, -3.0 A, 0.103 Ω@4.5V, SOT
SSM3J14T	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J14T(T5LPAS,E)	TOSHIBA	获取价格	Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
SSM3J14T(TE85L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.7A I(D),SOT-346
SSM3J14T(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.7A I(D),SOT-346

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