Datasheet > SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

更新时间： 2024-11-20 21:14:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	224K
描述
MOSFET P-CH 20V 4.6A UFM

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SSM3J129TU(TE85L) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.57	Base Number Matches：	1

SSM3J129TU(TE85L) 数据手册

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SSM3J129TU

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)

SSM3J129TU

○Power Management Switch Applications

○High-Speed Switching Applications

•

1.5 V drive

Unit: mm

•

Low ON-resistance R = 137mΩ (max) (@V

= -1.5 V)

= -1.8 V)

88mΩ (max) (@V

2.1±0.1

1.7±0.1

62mΩ (max) (@V

46mΩ (max) (@V

= -2.5 V)

= -4.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

-20

Unit

Drain-Source voltage

DSS

Gate-Source voltage

Drain current

± 8

GSS

(Note 1)

(Note 2)

-4.6

-9.2

500

Pulse

Drain power dissipation

t=10s

1000

150

1:Gate

°C

Channel temperature

2:Source

3:Drain

stg

Storage temperature range

−55 to 150

UFM

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba

Semiconductor

Reliability

Handbook

(“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: The junction temperature should not exceed 150°C during use.

Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

JJE

Start of commercial production

2008-10

2014-03-01

12 3 4 5 6

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