Datasheet > SSM3J135TU

SSM3J135TU

更新时间： 2024-10-27 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	445K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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SSM3J135TU 数据手册

SMD Type

MOSFET

Transistors

P-Channel MOSFET

SSM3J135TU

■Features

● VDS (V) = -20 V

● ID = -3.0 A

● 1.5 V drive

● Low ON-resistance:

DS(ON) = 260 mΩ (max) (@VGS = -1.5 V)

DS(ON) = 180 mΩ (max) (@VGS = -1.8 V)

DS(ON) = 132 mΩ (max) (@VGS = -2.5 V)

DS(ON) = 103 mΩ (max) (@VGS = -4.5 V)

1.Gate

2.Source

3.Drain

■Absolute Maximum Ratings (Ta = 25℃)

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

VDS

Gate-Source Voltage

±8

Continuous Drain Current

Pulsed Drain Current

(Note 1)

-3.0

℃

DP (Note 1)

-6.0

(Note 2)

(t < 1s)

500

Power Dissipation

1000

150

Junction Temperature

Storage Temperature Range

stg

-55 to 150

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

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