Datasheet > SSM3J133TU

SSM3J133TU

更新时间： 2024-11-20 11:57:11

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	193K
描述
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSâ¥)

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SSM3J133TU 数据手册

SSM3J133TU

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

SSM3J133TU

○Power Management Switch Applications

Unit: mm

•

1.5V drive

Low ON-resistance: R

2.1±0.1

1.7±0.1

= 88.4 mΩ (max) (@V

= 56.0 mΩ (max) (@V

= 39.7 mΩ (max) (@V

= 29.8 mΩ (max) (@V

= -1.5 V)

= -1.8 V)

= -2.5 V)

= -4.5 V)

DS(ON)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-20

± 8

DSS

Gate-source voltage

GSS

(Note1)

(Note2)

t<1s

-5.5

Drain current

Pulse

-11.0

500

power dissipation

1: Gate

1000

2: Source

3: Drain

Channel temperature

150

°C

UFM

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2U1A

weight: 6.6 mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note1: The channel temperature should not exceed 150°C during use.

Note2: Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (Top view)

JJL

2010-11-30

12 3 4 5 6

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