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SSM3J109TU,LF(T

更新时间： 2024-11-20 19:49:39
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 228K
描述
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET

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SSM3J109TU,LF(T 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.76
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：2 A最大漏源导通电阻：0.13 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SSM3J109TU,LF(T 数据手册

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SSM3J109TU  
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type  
SSM3J109TU  
○Power Management Switch Applications  
○High-Speed Switching Applications  
Unit: mm  
•
1.8 V drive  
2.1±0.1  
1.7±0.1  
•
Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V)  
Ron = 172 mΩ (max) (@VGS = -2.5 V)  
Ron = 130 mΩ (max) (@VGS = -4.0 V)  
1
2
Absolute Maximum Ratings (Ta = 25˚C)  
3
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
-20  
± 8  
DS  
Gate-source voltage  
V
V
GSS  
DC  
I
-2  
D
Drain current  
A
Pulse  
I
-4  
DP  
P
P
(Note 1)  
800  
D
D
Drain power dissipation  
mW  
1. Gate  
(Note 2)  
500  
2. Source  
3. Drain  
Channel temperature  
Storage temperature  
T
°C  
°C  
150  
ch  
T
stg  
−55 to 150  
UFM  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-2U1A  
Weight: 6.6 mg (typ.)  
Note 1: Mounted on a ceramic board  
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)  
Note 2: Mounted on an FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
-20  
-12  
⎯
Typ.  
⎯
Max  
⎯
Unit  
V
V
I
I
= -1 mA, V  
= -1 mA, V  
= 0  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-source breakdown voltage  
V
= +8 V  
⎯
⎯
Drain cutoff current  
I
V
V
V
V
= -20 V, V  
= 0  
⎯
-10  
±1  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±8 V, V  
= 0  
⎯
⎯
GSS  
DS  
V
= -3 V, I = -1 mA  
-0.3  
2.4  
⎯
⎯
-1.0  
⎯
th  
D
⏐Y ⏐  
= -3 V, I = -1 A  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
4
S
fs  
D
I
I
I
= -1.0 A, V  
= -0.5 A, V  
= -0.2 A, V  
= -4 V  
91  
130  
172  
300  
⎯
D
D
D
GS  
GS  
GS  
Drain-source ON-resistance  
R
mΩ  
= -2.5 V  
= -1.8 V  
⎯
123  
175  
335  
70  
DS (ON)  
⎯
Input capacitance  
C
V
V
V
= -10 V, V  
= -10 V, V  
= -10 V, V  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
= 0, f = 1 MHz  
⎯
pF  
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
Output capacitance  
C
⎯
⎯
oss  
Reverse transfer capacitance  
C
⎯
56  
⎯
rss  
on  
Turn-on time  
Switching time  
t
t
V
V
= -10 V, I = -1A,  
⎯
20  
⎯
DD  
GS  
D
ns  
V
= 0 to -2.5 V, R = 4.7 Ω  
Turn-off time  
G
⎯
20  
⎯
off  
Drain-source forward voltage  
Note 3: Pulse test  
V
I
= 2 A, V = 0  
GS  
(Note 3)  
⎯
0.85  
1.2  
DSF  
D
Start of commercial production  
2005-08  
1
2014-03-01  
12345

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