SSM3J111TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J111TU
High Speed Switching Applications
Unit: mm
•
•
2.5V drive
2.1±0.1
1.7±0.1
Low on-resistance:
R
R
= 480mΩ (max) (@V
= 680mΩ (max) (@V
= −4 V)
on
GS
GS
= −2.5 V)
on
Absolute Maximum Ratings (Ta = 25°C)
1
2
3
Characteristic
Drain-Source voltage
Symbol
Rating
Unit
V
−20
± 12
−1
V
V
DS
Gate-Source voltage
V
GSS
DC
I
D
Drain current
A
Pulse
I
−2
DP
P
P
800
D (Note 1)
D (Note 2)
Drain power dissipation
Channel temperature
mW
500
1: Gate
2: Source
3: Drain
T
150
°C
°C
ch
Storage temperature range
T
−55~150
stg
UFM
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
2-2U1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Weight: 6.6 mg (typ.)
Note 1: Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Symbol
Test Conditions
Min
Typ.
⎯
Max
Unit
V
V
I
= −1 mA, V
= 0
−20
⎯
⎯
−1
(BR) DSS
D
GS
= −20 V, V = 0
GS
I
V
V
V
V
⎯
μA
μA
V
DSS
DS
GS
DS
DS
Gate leakage current
I
= ±12V, V = 0
⎯
⎯
±1
GSS
DS
Gate threshold voltage
V
= −3 V, I = −0.1 mA
−0.6
0.6
⎯
⎯
−1.1
⎯
th
D
Forward transfer admittance
⏐Y ⏐
= −3 V, I =− 0.3 A
(Note3)
(Note3)
(Note3)
1.2
380
530
160
90
S
fs
D
I
I
= −0.3 A, V
= −4.0 V
= −2.5 V
480
680
⎯
D
D
GS
GS
Drain-Source on-resistance
R
mΩ
DS (ON)
= −0.3 A, V
⎯
Input capacitance
C
V
V
V
= −10 V, V
= −10 V, V
= −10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
Output capacitance
C
⎯
⎯
oss
Reverse transfer capacitance
C
⎯
25
⎯
rss
on
Turn-on time
Switching time
t
t
V
V
= −10 V, I = −0.3 A,
⎯
27
⎯
DD
GS
D
ns
V
= 0~−2.5 V, R = 4.7 Ω
⎯
⎯
Turn-off time
43
G
off
⎯
Drain-Source forward voltage
Note3: Pulse test
V
I
= 1A, V = 0 V
GS
(Note3)
0.85
1.2
DSF
D
1
2007-11-01