Datasheet > SSM3J120TU,LF(T

SSM3J120TU,LF(T

更新时间： 2024-11-24 20:52:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	221K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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SSM3J120TU,LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

SSM3J120TU,LF(T 数据手册

SSM3J120TU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J120TU

○Power Management Switch Applications

○High-Current Switching Applications

Unit: mm

•

1.5 V drive

Low on-resistance

2.1±0.1

1.7±0.1

= 140 mΩ (max) (@V

= -1.5 V)

= 78 mΩ (max) (@V

= 49 mΩ (max) (@V

= 38 mΩ (max) (@V

= -1.8 V)

= -2.5 V)

= -4.0 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-Source voltage

Symbol

Rating

Unit

-20

± 8

Gate-Source voltage

GSS

-4.0

-8.0

800

Drain current

Pulse

(Note 1)

(Note 2)

Drain power dissipation

500

150

1. Gate

Channel temperature

Storage temperature

°C

2. Source

3. Drain

stg

−55~150

UFM

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6mg (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1 : Mounted on ceramic board

(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm²)

Note 2 : Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

JJB

Start of commercial production

2005-11

2014-03-01

12 3 4 5 6

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