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SSM3J114TU

更新时间: 2024-10-28 06:14:15
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
6页 179K
描述
High-Speed Switching Applications Power Management Switch Applications

SSM3J114TU 技术参数

生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.8 A最大漏极电流 (ID):1.8 A
最大漏源导通电阻:0.526 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSM3J114TU 数据手册

 浏览型号SSM3J114TU的Datasheet PDF文件第2页浏览型号SSM3J114TU的Datasheet PDF文件第3页浏览型号SSM3J114TU的Datasheet PDF文件第4页浏览型号SSM3J114TU的Datasheet PDF文件第5页浏览型号SSM3J114TU的Datasheet PDF文件第6页 
SSM3J114TU  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
SSM3J114TU  
High-Speed Switching Applications  
Power Management Switch Applications  
Unit: mm  
1.5 V drive  
2.1±0.1  
1.7±0.1  
Low on-resistance  
R
on  
R
on  
R
on  
R
on  
= 526 m(max) (@ V  
= 321 m(max) (@ V  
= 199 m(max) (@ V  
= 149 m(max) (@ V  
= -1.5 V)  
= -1.8 V)  
= -2.5 V)  
= -4.0 V)  
GS  
GS  
GS  
GS  
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
-20  
± 8  
-1.8  
-3.6  
800  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
D
Drain current  
A
1. Gate  
2. Source  
3. Drain  
Pulse  
I
DP  
P
P
(Note 1)  
(Note 2)  
D
D
Drain power dissipation  
mW  
500  
150  
UFM  
Channel temperature  
Storage temperature  
T
ch  
°C  
°C  
T
stg  
55 ~ 150  
JEDEC  
JEITA  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-2U1A  
Weight: 6.6 mg (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on ceramic board  
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)  
Note 2: Mounted on FR4 board  
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= −1 mA, V  
= −1 mA, V  
= 0  
20  
12  
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
= +8 V  
Drain cut-off current  
I
V
V
V
V
= 20 V, V  
= 0  
10  
±1  
μA  
μA  
V
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ± 8 V, V  
= 0  
GSS  
V
= −3 V, I = −1 mA  
0.3  
1.9  
1.0  
th  
D
Y ⏐  
= -3 V, I = -0.6 A  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
(Note 3)  
3.9  
100  
133  
183  
220  
331  
48  
S
fs  
D
I
I
I
I
= -0.6 A, V  
= -0.6 A, V  
= -0.6 A, V  
= -0.1 A, V  
= -4.0 V  
= -2.5 V  
= -1.8 V  
= -1.5 V  
149  
199  
321  
526  
D
D
D
D
GS  
GS  
GS  
GS  
Drain-Source ON-resistance  
R
mΩ  
DS (ON)  
Input capacitance  
C
pF  
pF  
pF  
ns  
iss  
V
= −10 V, V  
= 0  
GS  
DS  
Output capacitance  
C
oss  
f = 1 MHz  
Reverse transfer capacitance  
C
39  
rss  
on  
Switching time  
Turn-on time  
t
V
= −10 V, I = −0.6 A  
19  
DD  
D
1
2007-11-01  

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